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savantic semiconductor product specification silicon pnp power transistors 2SB747 description with t o-220c package complement to type 2sd812 wide area of safe operation applications high power amplifier applications suitable for 15~20w home stereo output amplifier and voltage regulator pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -5 a i cm collector current-peak -8 a p c collector dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -50~150 fig.1 simplified outline (to-220) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB747 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -2.0 v v be base-emitter on voltage i c =-3a ; v ce =-5v -1.8 v i cbo collector cut-off current v cb =-80v; i e =0 -50 a i ebo emitter cut-off current v eb =-3v; i c =0 -50 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 20 h fe-2 dc current gain i c =-1a ; v ce =-5v 40 200 h fe-3 dc current gain i c =-3a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v; f=1mhz 190 pf f t transition frequency i c =-0.5a ; v ce =-5v 7 mhz h fe-2 classifications r q p 40-80 60-120 100-200 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB747 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm) downloaded from: http:///

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